to ? 92 1. collector 2. base 3. emitter to-92 plastic-encapsulate transistors bc546/bc547/BC548 transistor (npn) features z high voltage z complement to bc556,bc557,bc558 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit bc546 80 bc547 50 v cbo collector-base voltage BC548 30 v bc546 65 bc547 45 v ceo collector-emitter voltage BC548 30 v bc546 6 v bc547 6 v v ebo emitter-base voltage BC548 5 v i c collector current-continuous 0.1 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit bc546 80 bc547 50 collector-base breakdown voltage BC548 v (br)cbo i c = 0.1ma,i e =0 30 v bc546 65 bc547 45 collector-emitter breakdown voltage BC548 v (br)ceo i c =1ma,i b =0 30 v bc546 6 bc547 6 emitter-base breakdown voltage BC548 v (br)ebo i e =10 a,i c =0 5 v bc546 v cb =70v,i e =0 0.1 a bc547 v cb =50v,i e =0 0.1 a collector cut-off current BC548 i cbo v cb =30v,i e =0 0.1 a bc546 v ce =60v,i b =0 0.1 a bc547 v ce =45v,i b =0 0.1 a collector cut-off current BC548 i ceo v ce =30v,i b =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe * v ce =5v, i c =2ma 110 800 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =5ma 0.3 v base-emitter saturation voltage v be(sat) i c =100ma,i b =5ma 1.1 v v ce =5v, i c =2ma 0.58 0.7 v base-emitter voltage v be v ce =5v, i c =10ma 0.75 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 4.5 pf transition frequency f t v ce =5v,i c =10ma, f=100mhz 150 mh classification of h fe rank a b c range 110-220 200-450 420-800 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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